VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 4000 5200 8200 85x103 0.8 0.086 Rectifier Diode V A A A V m 5SDD 54N4000 Doc. No. 5SYA1171-00 Dec. 03 * Patented free-floating silicon technology * Very low on-state losses * Optimum power handling capability Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = 0...150C 3600 V f = 5 Hz, tp = 10ms, Tj = 0...150C 4000 V Non - repetitive peak reverse voltage VRSM Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 150C max 400 Unit mA Mechanical data Maximum rated values 1) Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 81 typ 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS min typ FM = 90 kN, Ta = 25 C 56 Air strike distance Da 22 1) Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 2.8 kg 35.9 mm mm mm 5SDD 54N4000 On-state Maximum rated values 1) Parameter Symbol Conditions Max. average on-state current IF(AV)M min typ 50 Hz, Half sine wave, TC = 85 C Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t tp = 10 ms, Tj = 150C, VR = 0 V tp = 8.3 ms, Tj = 150C, VR = 0 V max Unit 5200 A 8200 A 85x10 3 A 36.3x10 6 A2s 90x10 3 A 34.6x10 6 A2s Characteristic values Parameter Symbol Conditions max Unit On-state voltage VF IF = 5000 A, Tj = 150C min typ 1.23 V Threshold voltage V(T0) 0.8 V Slope resistance rT Tj = 150C IT = 2500...7500 A 0.086 m max Unit 18000 As Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr min typ diF/dt = -10 A/s, VR = 200 V IFRM = 4000 A, Tj = 150C ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-00 Dec. 03 page 2 of 6 5SDD 54N4000 Thermal Maximum rated values 1) Parameter Symbol Conditions Operating junction temperature range Tvj min max Unit 0 150 C -40 150 C max Unit Double-side cooled Fm = 81...108 kN 5.7 K/kW Rth(j-c)A Anode-side cooled Fm = 81...108 kN 11.4 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 11.4 K/kW Double-side cooled Fm = 81...108 kN 1 K/kW Single-side cooled Fm = 81...108 kN 2 K/kW Storage temperature range Tstg typ Characteristic values Parameter Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min typ Analytical function for transient thermal impedance: n Zth(j-c) (t) = R th i (1 - e-t/ i ) i =1 i 1 2 3 4 Rth i(K/kW) 3.728 1.248 0.433 0.292 i(s) 0.8115 0.1014 0.0089 0.0015 Fig. 1 Transient thermal impedance junction-tocase. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-00 Dec. 03 page 3 of 6 5SDD 54N4000 Max. on-state characteristic model: VF25 = Max. on-state characteristic model: ATvj + BTvj I F + CTvj ln(I F +1) + DTvj I F A25 486.40x10-3 Valid for IF = 300 - 110000 A B25 C25 45.53x10-6 65.82x10-3 VF150 = ATvj + BTvj I F + CTvj ln(I F +1) + DTvj I F Valid for IF = 300 - 110000 A D25 A150 B150 C150 D150 68.19x10-15 22.00x10-3 49.09x10-6 113.10x10-3 -20.75x10-15 Fig. 2 Isothermal on-state characteristics Fig. 3 Isothermal on-state characteristics Fig. 4 On-state power losses vs average on-state current. Fig. 5 Max. permissible case temperature vs average on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-00 Dec. 03 page 4 of 6 5SDD 54N4000 Fig. 6 Surge on-state current vs. pulse length. Halfsine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. Fig. 8 Recovery charge vs. decay rate of on-state current. Fig. 9 Peak reverse recovery current vs. decay rate of on-state current. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1171-00 Dec. 03 page 5 of 6 5SDD 54N4000 Fig. 10 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated otherwise. Related application notes: Doc. Nr Titel 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 Designing Large Rectifiers with High Power Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 abbsem@ch.abb.com www.abb.com/semiconductors Doc. No. 5SYA1171-00 Dec. 03